'Ballistic' electron transport in bipolar devices.
01 January 1987
The dynamics of non-equilibrium electron transport in bipolar devices has been investigated by calculating minority carrier elastic and inelastic scattering rates as a function of energy for different majority carrier concentrations in typical p- type III-V semiconductors. Scattering rates depend on the majority carrier concentration and a constraint involving the ratio of electron and heavy-hole effective mass. Our results are useful as design criteria for bipolar devices which utilize "ballistic" electron transport.