Bilayer process for T-gates and Gamma-gates using 100 KV e- beam Lithography

This paper describes the use of a unique combination of an environmentally stable chemically amplified photoresist (UV113, Shipley) and a copolymer of methyl styrene and chloro methyl acrylate P(MS/CMA) resist (ZEP520, Zeon), without any additional intermediate layers, in the fabrication of high-resolution T-gates and G-gates. The two resists used are innocuous to each other during the designed process flow, providing flexibility, high resolution, greater throughput and ease of use.