Blue Stark Shift in Modulation Strained InGaAs/InP Quantum Wells.

We show that by a proper design and modulation of the composition of a ternary InGaAs quantum well one can design the optical properties of the system. A description is given for such a case in which a considerable blue Stark shift of the absorption edge of a p-i-n device is achieved. This blue shift together with a field enhanced room temperature excitonic effect may prove very useful for the operation of bistable electrooptic devices.