Bonding Configurations at Epitaxial CaF sub 2 /Si Interfaces.
01 January 1988
Determination of the bonding configuration at the epitaxial CaF sub 2 /Si(111) interface has revealed Ca-Si bonds in the interfacial plane. Removal of an unstable layer of F from the interface occurs during a rapid thermal anneal. In comparison, the CaF sub 2 /Si(100) interface is not smooth, making assignment of interface bonding configurations ambiguous. After a rapid thermal anneal, evidence for an intermediate interfacial phase is observed.