BURIED RIDGE STRIPE LASERS USING INAS/INP (100) QUANTUM DASHES BASED ACTIVE LAYER : A STEP TOWARDS LOW NOISE SOURCES FOR HIGH-SPEED DIRECT MODULATION

We investigate the devices performances of InAs/InP (100) quantum dash buried stripe ridge lasers. We demonstrate high-gain quantum dash based lasers whose dynamic properties are compatible with high-speed devices requirements. The good temperature characteristic of such lasers allows 10 Gb/s direct modulation in the temperature range of 25-75/spl deg/C. The mode-beating RF spectrum of passively locked FP quantum dashes laser shows a very narrow spectral linewidth (50 kHz) attributed to a strong phase correlation between modes.