C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
26 April 2001
A MOS capacitor formed by electron-beam deposition of Ga2O3(Gd2O3) on GaN has been characterised by C-V and G-V measurements at high AC frequencies of 1000, 100 and 10KHz. An accurate C-V relation has been obtained consistently by using a model that includes both series and shunt parasitic resistances. Tnc results indicate a fixed oxide charge density of similar to3.0 x 10(11)cm(-2), and 3 minimum interface state density of similar to4.2 x 10(11)cm (2)eV (I) ar the Ga2O3(Gd-2-O-3)/GaN interface.