Calculation of Ion Implantation Profiles for Two-Dimensional Process Modeling.
01 January 1986
Advanced integrated circuit processing requires detailed modeling of each stage of the fabrication, to provide input for two- dimensional device models. This paper summarizes the various methods that are available for calculating ion implantation profiles in two dimensions, comparing the generality and expense of each approach. Some problems remain in modeling channeling and in verifying the results directly. Examples illustrate the range of problems that can be tackled successfully and the information that can be obtained.