Capture of Electrons and Holes in Quantum Wells.
01 January 1988
The capture of electrons and holes by quantum wells in multiple quantum well samples of InGaAs/InP is investigated using subpicosecond luminescence spectroscopy. For samples with 200angstroms thick barriers, quantum capture processes dominate, and the hole and electron capture times are 500angstroms), transport of carriers to the well also contributes. Our results show that Coulomb interaction between electrons and holes 'traps' the electrons in unbound states in InGaAs before they are captured by the well.