Carbon Doping in Molecular Beam Epitaxy of GaAs by a Heated Graphite Filament
22 June 1988
Carbon doping of GaAs grown by molecular beam epitaxy (MBE) by a resistance- heated graphite filament has been demonstrated for the first time. Controlled carbon acceptor concentrations ranging up to 10 sup 20 cm sup -3 can be readily obtained with good hole mobilities and photoluminescence intensities. Previous work has shown that carbon doping of GaAs is possible by gas sources such as trimethyl gallium or trimethyl aluminum in metalorganic MBE and flow-rate modulation epitaxy.