Carbon Doping of InAlAs in LP-MOVPE Using CBr sub 4

P-type InAlAs material is used in several microelectronic and optoelectronic devices such as heterojunction bipolar transistors (1) and laser (2). Using carbon as the p-dopant provides two advantages over Zn, the commonly used p-dopant: high incorporation efficiency in InAlAs, and very limited out-diffusion. 

Only a few studies have been reported until now in the literature of carbon doping in InAlAs, grown by molecular beam epitaxy (MBE) or metal organic phase epitaxy (MOVPE).