Carbon-Related Defects in Silicon.

The role in interstitial defect reactions in silicon was examined. A systematic study of the dominant interstitial defects in boron-doped, electron-irradiated silicon with controlled carbon and oxygen concentrations was conducted by means of Deep Level Transient Spectroscopy. Defect introduction rates and isochronal annealing data are given. Competing reactions involving interstitials among background impurity constituents were observed. Minority carrier lifetime was correlated with dominant defects.