Carrier concentrations and Fermi levels in semi-conductors
14 June 1952
The statistical theory of free charge carrier concentrations and the Fermi level is reviewed and developed systematically using Fermi-Dirac statistics. Approximations to both classical and completely degenerate solids are considered and the errors involved calculated. The position of the Fermi level for a solid in which both chemical impurities and crystal defects are present is discussed, and in particular Ge and Si before and after particle bombardment are considered.