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Carrier induced index change in AlGaAs quantum well laser

01 January 1984

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Measurements of the carrier induced refractive index change in AlGaAs quantum well lasers are presented which show that the guided mode in single quantum well lasers exhibits a small ((delta)n/(delta)N ~ -3x10(-22) cm(3)) carrier induced change in refractive index. This is more than an order of magnitude smaller than the corresponding value for conventional active layer lasers.