Carrier induced index change in AlGaAs quantum well laser

Measurements of the carrier induced refractive index change in AlGaAs quantum well lasers are presented which show that the guided mode in single quantum well lasers exhibits a small ((delta)n/(delta)N ~ -3x10(-22) cm(3)) carrier induced change in refractive index. This is more than an order of magnitude smaller than the corresponding value for conventional active layer lasers.