CdZnTe/ZnTe and HgCdTe/CdTe Quantum Wells Grown by Molecular Beam Epitaxy.
01 January 1990
The large range of band gaps and unique optical properties of II-VI semiconductors offer important opportunities for physics and device applications. Quantum wells based on Hg sub (1- x) Cd sub x Te and Cd sub (1-x) Zn sub x Te can give access to many of these properties, at wavelengths varying from the yellow to the long wavelength infrared region of the spectrum. High quality quantum wells of these materials have been grown on GaAs substrates despite the large lattice mismatch. Growth, optical properties, and results of interdiffusion studies are discussed.