Channeling analysis of epitaxial, ultra-thin, strained films of Ge in Si.

We describe a channeling analysis of the strain associated with ultra-thin (2-6 monolayers), epitaxial films of Ge embedded in Si. Features of the channeling angular scans are associated with the strain field in these solid-state structures. Superlattices of the ultra-thin films are extensions of the strain field of the single layer films. The channeling angular scans, measured in off-normal channeling directions, yield some of the most unusual and unique data of this type ever presented. Comparison of the data with numerical simulations confirm the structure of these films.