Channelled substrate buried heterostructure InGaAsP/InP laser with semi-insulating organometallic vapor phase epitaxial base structure and liquid phase epitaxial regrowth.

A channelled substrate barried heterostructure InGaAsP/InP laser is demonstrated which uses a semi-insulating InP base structure current confinement layer formed by organometallic vapor phase expitaxy. The use of a semi-insulating base structure current confinement layer is shown to result in good device performance. Pulsed threshold currents as low as 16mA and pulsed light output at 100mA current as high as 12mW have been achieved. Good burn-in characteristics have been measured, indicative of good reliability for these devices. The superior high frequency response expected for a device with a semi-insulating base structure has been verified, with small signal bandwidths exceeding 2.4 GHz. In addition, modulation at rates as high as 2.0 Gb/s has been achieved. This laser structure may represent a low cost and high throughput approach to supplying lasers for demanding applications.