Channelled-substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowth.

Channelled-substrate buried heterostructure lasers have been fabricated with vapor phase epitaxial grown base structures and liquid phase epitaxial regrowth. These devices have low threshold currents (14 mA minimum, median 19 mA), exhibit a pulsed threshold current temperature dependence with a characteristic temperature of 55 K, and operate CW up to 60 C heat sink temperature. Burn-in results on these lasers have exhibited degradation rates as low as 39 mA per thousand hours under 60 C and 3 mW automatic power control (APC) accelerated aging conditions.