Characteristics of Doping and Diffusion of Heavily Doped N and P Type InP and InGaAs Epitaxial Layers Grown By Metalorganic Chemical Vapor Deposition

Electronic and photonic device applications of the InP/InGaAs semiconductor materials system requiring the growth of epitaxial material doped to or near the saturation limit of the impurity in the host material present an extreme challenge for the crystal grower. To produce device heterostructures with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection it is necessary to understand the limits of dopant incorporation, the behavior of the impurity in the material, and the influence of adjacent layers on the dopant distribution.