Characteristics of Filament Recrystallized SOI Films SiO sub 2

Thin SOI films on SiO sub 2 produced by melting and recrystallization of poly-silicon in a traveling-strip-heater furnace have been characterized. N-channel MOS transistors were fabricated using standard MOS technology. The dc output characteristics of these devices compared favorably with controls fabricated in CVD epitaxial films grown on single crystal silicon. Low grain boundary dislocations were observed in recrystallized SOI films; however; they do not seem to degrade surface mobility.