Characteristics of tin and cadmium doping in liquid phase epitaxial grown InGaAsP layers.
01 January 1985
The characteristics of tin and cadmium doping of liquid phase epitaxial grown InGaAsP layers have been investigated. A change in the solid composition of the quaternary is introduced as a result of the perturbation of the liquid solution composition by the dopants. The leads to a change in the lattice constant and a shift of the photoluminescence peak wavelength of the doped layers.