Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis

This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Green's function, traps detected by temperature-dependent experimental observation is located at the heterointerface δ-InGaP/GaAs, responsible for the GR noise sources. The simulated results are in good agreement with experimental data.