Characterization of a High Speed 256Kx1 Radiation Hard SRAM.
01 January 1988
The measured characteristics of a high speed 256K x 1 Radiation Hard SRAM fabricated in 1.0micron CMOS technology will be discussed. The performance of the device as a function of power supply and temperature will be presented, showing read and write cycle times of less than 50 ns under worst case operating conditions. Memory and transistor performance as a function of total dose radiation (to 1 Mrad(SiO sub 2) will also be described. SEU immunity and transient upset characteristics are expected to be available for the presentation.