Characterization of Chemical Deoxidized Liquid Phase Epitaxial GaAs.
01 January 1987
The deoxygenation of the gallium solvent by small additions of Ti or Zr in the liquid phase epitaxial (LPE) growth of GaAs was studied using an in-situ electrochemical measurement technique. The oxygen activity in the liquid Ga melt was reduced in a few minutes from its steady state value in a purified hydrogen ambient at 750C by one or three orders of magnitude by the addition of Ti or Zr, respectively. The additions cause an increased tendency to produce high mobility p-type LPE GaAs. Photoluminescence, deep level transient spectroscopy and secondary ion mass spectroscopy were used to establish the role of oxygen and the Ti or Zr additions in the compensation mechanism of the resulting LPE layers.