Characterization of GaAs and Si by a microwave photoconductance technique.

A non-destructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi-insulating, doped or implanted GaAs. Although the measurement time is increased, the technique is also applicable to Si. A review of the advantages and limitations is discussed and some example applications to a variety of GaAs and Si structures are presented.