Characterization of GaAsSb/GaAs quantum wells for 1.3 μ VCSELs
01 January 2001
Summary form only given. GaAsSb/GaAs quantum wells grown on GaAs substrates are a potential active material for the monolithic growth of 1.3 μm VCSELs. In this material system we determine a type II band alignment, with a small conduction band offset Î"Ec = 100 meV. We measure material gain coefficients comparable to those of type I InGaAs quantum wells, although under flat band conditions the electrons and holes are spatially separated