Characterization of high dose Fe implantation into p-GaN
19 November 2001
High concentrations (3-5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 degreesC). Subsequent annealing at 700 degreesC produced apparent ferromagnetic behavior up to similar to 250 K for the 3 at. % sample. Selected area diffraction patterns did not reveal the presence of any other phases in the Fe-implanted region. The direct implantation process appears promising for examining the properties of magnetic semiconductors with application to magnetotransport and magneto-optical devices. (C) 2001 American Institute of Physics.