Characterization of semi-insulating GaAs grown by a vertical gradient freeze technique.

Single crystals of undoped semi-insulating GaAs grown by a novel vertical gradient freeze (VGF) method have been characterized by cathodoluminescence, resistivity, Hall mobility, and dislocation density measurements, and are compared to commercially available Czochralski-grown crystals. The results of these experiments indicate that this growth technique for III-V compound semiconductors yields high quality GaAs crystals. The high radial uniformity determined from resistivity and Hall mobility measurements and low dislocation density indicate that VGF GaAs crystals are suitable for integrated circuit (IC) device fabrication.