Skip to main content

Characterization of Shallow n sup + p and p sup + n Junctions with TiSi sub 2

New Image

Thsi paper investigates the fabrication of titanium silicided shallow n sup + p and p sup + n junctions. We investigate the effect of various furnace and rapid thermal annealing (RTA) cycles on the dopant profiles of P sup + (BF sub 2)/n and n sup + (As+P)/p shallow junctions with and without Ge pre-amorphization.