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    Characterization of Shallow n sup + p and p sup + n Junctions with TiSi sub 2

Characterization of Shallow n sup + p and p sup + n Junctions with TiSi sub 2

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Thsi paper investigates the fabrication of titanium silicided shallow n sup + p and p sup + n junctions. We investigate the effect of various furnace and rapid thermal annealing (RTA) cycles on the dopant profiles of P sup + (BF sub 2)/n and n sup + (As+P)/p shallow junctions with and without Ge pre-amorphization.