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Characterization of silicon carbide (SiC) epitaxial channel MOSFETs

01 November 2000

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Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SIC substrates with NS epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. 

A buried channel mobility of 230 cm(2)/Vs and an accumulation-mode surface mobility of 45 cm(2)/Vs are extracted at room temperature under a 50% activation of channel donor impurities.