Characterization of silicon carbide (SiC) epitaxial channel MOSFETs

Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SIC substrates with NS epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. 

A buried channel mobility of 230 cm(2)/Vs and an accumulation-mode surface mobility of 45 cm(2)/Vs are extracted at room temperature under a 50% activation of channel donor impurities.