Characterization of Si/SiO sub 2 interfaces using TEM lattice imaging and X-ray micro diffraction techniques.

A high resolution transmission electron microscopy (TEM) technique of imaging Si(111) planes at Si/SiO sub 2 interface and an accurate measurement of the state in silicon sigma sub si just below the interface using X-ray micro diffraction (XRMD) technique are discussed in this memorandum as a powerful combination of two analytical techniques to characterize the interface. This combined technique was applied to the study of Si/SiO sub 2 interfaces for various oxides (75-250angstroms) processed by different thermal oxidation procedures.