Characterization of the Frequency Response of 1.5microns InGaAsP DFB Laser Diode and an InGaAs Pin Photodiode by Heterodyne Measurement Technique.
01 January 1986
The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) and intensity modulation (IM) index of a 1.5micron InGaAsP DFB-VPT laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output per facet decreases from 60 at 100 MHz modulation frequency to 3.3 above 2 GHz.