Characterization of the InGaAs Pin and InP JFET for Receiver OEIC

We have previously demonstrated a monolithically integrated receiver OEIC (Opto Electronic Integrated Circuit) for long wavelength (1.3 um to 1.55 um) optical communications. The circuit, which consisted of one InGaAs PIN photodiode, one feedback resistor, six implanted JFETs, and four level shifting diodes, exhibited very high sensitivity (-36. 4 dBm at 200 MBit/s NRZ for 10 sup -9 BER) and a large dynamic range (15 db). In this talk, we describe in detail the individual performance of the photodiode and the FETs at DC and microwave frequencies.