Charge injection transistor based on real-space hot-electron transfer.

We describe a new type of transistor based on hot-electron transfer between two conducting layers in an AlGaAs/GaAs heterojunction structure. One of these layers is the FET channel. The other layer (implemented as a heavily doped GaAs substrate) is separated from the channel by an Al(x)Ga(l-x)As graded barrier, with x varying from 0.34 near the channel to 0.l near the substrate.