Cleaved-coupled-cavity lasers with large cavity length ratios for enhanced stability.
01 January 1984
The fabrication and operation of the first cleaved-coupled- cavity (C(3)) semiconductor lasers with large cavity length ratios are described. The internal cleaved facet is precisely positioned by photochemically etching a groove through most of the wafer. Single longitudinal mode operation is obtained over a temperature range of 21 C and over a current range of threshold to greater than four times threshold. These results are experimentally and theoretically compared to approximately- equal-length C(3) lasers.