Comment on Interstitial-type Defects Away From the Projected Ion Range in High Energy Ion Implanted and Annealed Silicon

This is a comment to a paper published in Applied Physics Letters entitled "Interstitial-type Defects Away From the Projected Ion Range in High Energy Ion Implanted and Annealed Silicon" by R. Kogler, A. Peeva, W. Anwand, G. Brauer, W. Skorupa, P. Werner, and U. Gosele. 

We point out an error the authors made in quoting the vacancy detection limit of positron annihilation spectroscopy and how this effects the interpretation of their data.