Common-Base Operation of GaN Bipolar Junction Transistors

Common-base GaN bipolar junction transistors (50-100microns emitter diameter) were operated at current densities up to 3.6 kA.cm sup (-2) and temperatures up to 300C. The devices were fabricated with a low damage, Cl sub 2 /Ar dry etch process, and the structure was grown by Molecular Beam Epitaxy. The reverse breakdown voltage of the vase-collector junction was found to decrease with increasing temperature in these unpassivated devices.