Comparison of Different Semiconductor Technologies for RF Power Transistors for Use Within Basestation Amplifiers
27 June 2003
Various advantages and drawbacks of the emerging technologies for RF power amplifiers like Si-VMOS, SIC-MESFET and GaN-HEMT are compared versus the established technology of Si-LDMOS. The different aspects will be treated from the system perspective and the system benefits of each terminology will be discussed.