(InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range
01 June 2001
The MOVPE growth of (InGa)(NAs)/GaAs structures with room temperature photoluminescence (RTPL) in 1-1.59 Irm range is presented. Infinite threshold current densities of 0.095, 1.22 and 2.3 kA/cm(2) at 1.18, 1.22 and 1.24 mum emission wavelengths, for the In(0.35)Ga(0.65)N(gamma)AS(1-gamma)/GaAs quantum well (QW) laser diodes with 0%, 0.4% and 0.5% of nitrogen, respectively, were obtained. Characteristic temperature (To) values of 82, 117 and 102 K were determined for as-cleaved lasers in the 20-80 degreesC temperature range. (C) 2001 Elsevier Science B.V. All rights reserved.