Principles and Applications of Metalorganic Chemical Vapor Deposition

While the metalorganic chemical vapor deposition (MOCVD) process was first applied to the grown of semiconductor thin films in 1967, it has been only recently that studies to determine the basic growth processes and chemical reactions that occur during the deposition of epitaxial films by MOCVD. This paper will discuss the current understanding regarding the kinetics and reaction chemistry that applies to the growth of binary GaAs thin films by the MOCVD process and a few important applications of MOCVD to the growth of III-V devices will be outlined.