Biography
Nicolas Vaissière graduated with the Ph.D. degree in physical and chemical sciences from ENS Cachan (France). He gained, during a period of more than five years, expertise in epitaxial film deposition for different applications: epitaxial diamond films for X-ray detectors with CEA; adapting MOCVD technology on commercial MPCVD reactors with GEMaC, and low-temperature PECVD of Si(Ge) on III-V for tandem solar cells with LPICM, Ecole Polytechnique. Since September 2017, he has been a MOVPE Researcher with Nokia Bell Labs France. Currently, he drives the development of advanced III-V EPI-structures such as EML, SOA, and UTC/APD for Information and Communications Technologies (ICT).