We report the first penalty free transmission experiment over 102.5 km long standard fiber at a bit rate of 10 Gbit/s using a 1.3microns wavelength low chirp integrated DFB/Electroabsorption modula
A REAMSOA chip is characterized as part of an ONU in single-pass and then bidirectional upstream 10 Gbit/s PON configurations.
We integrated an AlGalnAs modulator-amplifier using semi-insulating buried hetrostructure and selective area growth.
Gigabit PON /10 Gbps PON coexistence with two ONU generations on a single 1490 nm downstream wavelength is enabled by bitstacking and affiliated framing measures forming a novel electrical multiple
A vital signs detection system, based on motion sensing principle of the Doppler effect, will be described.
A modulation bandwidth up to 10 GHz in continuous wave mode operation is demonstrated using optimized 1.55 mum InAs/InP (100) quantum dashes based lasers.
An optical frequency comb generated by an InAs/InP quantum dash based passively mode-locked laser is investigated.
We report the generation of high-speed optical pulses at 1. 3micron and 1.5micron in short-cavity (60-100microns long) InGaAsP injection lasers by gain-switching.
We have demonstrated single photon detection (for lambda=1. 3 micron) at a counting rate of 10 MHz. This is the highest photon counting rate ever achieved.
This paper presents the first development of a space-borne power amplifier using the recently developed high breakdown, high Power HBT HB20S process of UMS.