SCBR lasers consist of 1.55micron channeled-substrate buried heterostructure lasers attached to silicon chip Bragg reflectors which stabilize single longitudinal mode operation.
High-frequency high-electron-mobility transistors (HEMTs) were fabricated on AlInN/AlN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate.
Complexes of alkali metal salts with various polymers have for some time recognized as fast ionic conductors.
A brief review of the structure of alkoxide and colloidal silica gels is presented. Hydrolysis and polymerization reactions at pH
We are investigating acid and base catalyzed alkoxide derived silica gels to determine the degree of metastability w.r.t.
Internetworking between two WDM ring networks was successfully achieved using a monolithic 2x2 multi-wavelength filter.
For a given physical network, in the design and planning, transmission technology selection and network optimisation are carried out such that the network is designed and dimensioned to meet the gi
We present a novel stabilization technique utilizing CW injection-locking and selective optical feedback for a 1.56 µm quantum-dash mode-locked laser.
An all polarization maintaining (PM) fiber heterodyne 1.4 Gbit/s DPSK system experiment is demonstrated.
All-active tapered-amplifier power splitters (TAPS) consisting of a single-mode input waveguide, which acts as a preamplifier, a two-dimensional (2-D) diffraction section, which amplifies the signa
