We propose a method for improving the speed of all-optical XOR operation using semiconductor optical amplifiers.
We propose a method for improving the speed of all-optical XOR operation using semiconductor optical amplifiers.
All-optical XOR operation of two 40 Gbit/s phase-shift-keyed data is demonstrated for the first time employing four-wave mixing in a semiconductor amplifier.
All-optical XOR operation of two 40-Gb/s phase-shift-keyed data is demonstrated for the first time employing four-wave mixing in a semiconductor amplifier.
All-optical XOR operation of two 40-Gb/s phase-shift-keyed data is demonstrated for the first time employing four-wave mixing in a semiconductor amplifier.
An AsCl sub 3-Ga-H sub 2 vapor phase epitaxial system has been developed that permits growth of extremely uniform multilayer GaAs structures on two inch diameter wafers with substantially improved
In this paper, we present a comprehensive experimental investigation of an all-Raman ultrawide single-band transmission system for both 10 and 40 Gb/s line rates.
A single-step technique is presented, for defining two-dimensional integrated channel waveguide structures with internal Bragg gratings in photosensitive germanosilica-on-silicon substrates using t
We demonstrate an all-VCSEL based 100-Gb/s polarization-division-multiplexed 4-level pulse-amplitude-modulation coherent system with two directly modulated 1.55-um single-mode VCSELs for the transm
The successful TELSTAR® and Relay satellite experiments have led to consideration of the equipment and techniques t h a t might be incorporated in future commercial and military satellite communica
