An overview of the various growth techniques which have been used to grow thin film high temperature superconductors will be given.
The thickness of silicon dioxide that is used as the transistor gate dielectric in most advanced memory and logic applications has decreased below 7 nm.
Novel pressure-coring technology, along with nuclear magnetic resonance (NMR) spectrometry and X-ray computed tomography (CT) of cores retrieved from scientific drillhole SB-15-D in the Sulphur Ban
This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K
A graph G is called an s-stage graph if the set of vertices can be partitioned into s disjoint subsets Vh · · · , Vs, and the set of edges partitioned into s -- 1 disjoint subsets E, · · ·, Es-i, s
The measured characteristics of a high speed 256K x 1 Radiation Hard SRAM fabricated in 1.0micron CMOS technology will be discussed.
We report on the development of a circularly polarized x-ray microprobe in the intermediate energy range from 5 to 10 keV.
By measuring the complex optical spectrum using a half-rate, sinusoidal modulation method, a mode locked quantum-dash Fabry-Perot laser is characterized for free-running operation and actively mode
This paper introduces latest results achieved with a Surface Acoustic Wave thermal sensor for vacuum measurements, namely a SAW-Pirani vacuum sensor.
Due to the current interest in quantum Hall states described by the Moore-Read or Pfaffian wavefunction, we have recently begun experiments involving a series of high-quality wide GaAs quantum well
