A 5-GHz, fully monolithic voltage-controlled oscillator (VCO) for Bluetooth wireless transceivers is demonstrated in a 0.25 μm CMOS technology using accumulation mode varactors and spiral inductors
An 11 tap digital filter chip that operates at speeds in excess of 40 MHz was developed using .9micron cell based CMOS technology.
A 0.16 μm modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs.
To be cost-effective and energy-efficient, massive multiple-input multiple-output (MIMO) arrays must be constructed from radio elements with low power and high linearity, but can tolerate higher no
Asymmetrical digital subscriber line (ADSL) provides robust transport of data at up to 8 Mb/s on common twisted pair without interfering with classical telephone service.
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A 5V 0.5μm CMOS line driver has distortion
This paper reports on the process/structure integration of a 0.6micron 3.3V twin-tub CMOS technology with N sup + /P sup + gate, salicide shallow junctions, fully planarized D1, tungsten plug windo
Topography related issues increasingly dominate the process design of micron and submicron VLSI interconnect technologies.
A transmission experiment was performed to study the high-speed potential of a long distance gigabit lightwave system employing a single-frequency 1.5micron laser and a new long wavelength III-V
