This paper reviews recent experimental studies of atomic photoionization and electron scattering in intense laser fields.
Intense laser fields can dramatically alter the behavior of free and bound electrons.
We have investigated the elliptical polarization dependence of Above-Threshold Ionization (ATI) in xenon and krypton.
We report the first high resolution angle-resolved electron spectra of helium photoionized above threshold by intense, linear or circularly polarized 532nm laser pulses.
Above Threshold Ionization (ATI) is investigated in xenon with pulses of light at 616 nm ranging from 15 psec to 0.4 psec.
The use of chemical beam epitaxy (CBE) instead of chemical vapor deposition (CVD) allows the incorporation of thermal atomic beams for doping.
The structure of VP4 has V chains with uniform intrachain separations of 3.25angstroms and interchain distances of 5.26angstroms.
We discuss the properties of semiconducting bulk ZnO when substituted with the magnetic transition metal ions Mn and Co, with substituent fraction ranging from x=0.02 to x=0.15.
We discuss the properties of semiconducting bulk ZnO when substituted with the magnetic transition metal ions Mn and Co, with substituent fraction ranging from x = 0.01 to x = 0.15.
Based on a simple scaling Ansatz, we argue that no pure thermodynamic states other than the paramagnetic state and a pair of states in zero magnetic field which are related by a global spin flip c
