It is shown that the activation energies for failure rate calculations can be conveniently estimated using Cox's method --- a distribution- free method widely applied in the medical field.
We present activation gap measurements of the fractional quantum Hall effect (FQHE) in the second Landau level.
803 804 806 807 809 810 810 811 811 Contamination of surfaces by organic vapors is a subtle factor that influences the electrical erosion of relay contacts.
Amporphous silicon films with B, P, and As implants were activated with thermal anneals that include spiking to the maximum temperature.
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Mechanisms of fluorine bond activation for chemical reaction are of interest for understanding fluorination of transition and organic compounds.
The diffusivity of Sb in Si is retarded by pressure, characterized at 860C by an activation volume of V*=(+0.03+-0.01) OMEGA, where OMEGA is the atomic volume.
The diffusivity of B in Si is enhanced by pressure, characterized by an activation volume of -0.17 +- 0.01 times the atomic volume OMEGA, which is close to the formation volume of the self-intersti
Both passive and active mode-locking have been demonstrated in single-section quantum dots Fabry-Perot semiconductor lasers without saturable absorber, generating pulses at 28 GHz repetition freque
Enhanced antenna technologies will be key enabling factors in the development of 5th-generation (5G) systems that will achieve significant improvements in system capacity.