Chemical vapor deposition has been used to deposit films and purify metals since about the turn of the century.
A process of selective epitaxial growth of silicon on an oxide- patterned substrate is developed and the quality of the deposited silicon film is characterized.
Low-field intergrain magnetoresistance (IMR) in the polycrystalline materials of double perovskite SrFe0.5Mo0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site.
Deep-UV (240-250 nm) lithography is of one the most promising new lithographic techniques for patterning devices with 0.35- 0.5microns structures.
Electronic sensor technology remains of widespread and intense interest.
High-tilt surface boundary conditions for liquid crystals have been produced using chemical treatment of the substrate followed by standard rubbing techniques.
In this talk we describe a detailed UHV study using high resolution EELS, XPS and TPD, which explores the complex properties of single crystalline nickel disilicide (NiSi2) thin films.
We describe a new approach to investigating chemisorption on size selected metal clusters.
Si 2p core-level photoemission spectroscopy is one of the most widely used tools for investigating the structure of the technologically important Si/SiO sub 2 interface.
HE public mind associates the chemist with glass retorts and evil smells, with war gases or the glare of furnaces against the sky.