Summary form only given. All-optical re-amplification and re-shaping (2R) is a key technology that enables long distance transmission of high-bit-rate data.
Electronic and photonic device applications of the InP/InGaAs semiconductor materials system requiring the growth of epitaxial material doped to or near the saturation limit of the impurity in the
Thin SOI films on SiO sub 2 produced by melting and recrystallization of poly-silicon in a traveling-strip-heater furnace have been characterized.
Growth of a single crystal was found in the first few oxide layers on GaAs(100) substrate, electron beam evaporated from a Ga5Gd3O12 source.
GaAs heterojunction field effect transistors (HFETs), and inverters and ring oscillators comprising HFETs have been exposed to neutron fluences of 5 x 10 sup 13 n/cm sup 2 to 1 x 10 sup 15 n/cm sup
We describe the analysis of heat flow in a type of tunable optical fiber grating that uses thin-film resistive heaters microfabricated on the surface of the fiber.
A compact lightning measuring instrument designed for the Galileo Jupiter Probe Mission has been operated intermittently for several years to monitor the magnetic field signals of Earth lightning.
Data are reported on short-channel MOSFET's fabricated in laser crystallized silicon-on-insulator (SOI) structures.
This paper presents a study of the high-frequency performance of thin film superconducting transmission circuits.
In a communications system which uses satellites in uncontrolled orbits, there would be times when the communication between two stations would be interrupted because no satellites would be in view
