We studied undoped GaAs films grown by metal organic chemical vapor deposition in a vertical geometry atmospheric pressure reactor.
Epitaxial GaAs layers were grown by Metal Organic Chemical Vapor Deposition on Si-on-insulator structures formed by high dose oxygen implantation.
Summary form only given. GaAsSb/GaAs quantum wells grown on GaAs substrates are a potential active material for the monolithic growth of 1.3 μm VCSELs.
High concentrations (3-5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 degreesC).
Perhaps the most problematic interferences in Secondary Ionization Mass Spectrometry (SIMS) are matrix effects, the often unknown relationship between the chemical composition of a solid and the se
We have grown by molecular beam epitaxy, GaAs/In sub x Ga sub (1-x) /GaAs heterostructures with In sub x Ga sub (1-x) As layers 20nm thick and varying x from 0.00 to 0.50 in 0.05 steps.
The background carrier concentration of undoped VPE-grown In (1-x)Ga(x)As/InP has been found to correlate to the x-ray linewidth.
We have investigated two In sub (1-x) G sub (ax) As sub y P sub (1-y)/InP p-i-n multiple quantum (MQW) solar cell structures (with and without gold contacts) with intrinsic (i)-InP spacers and two
Metal-Insulator-Semiconductor Tunneling Microscopy is a new technique for creating a 2 dimensional map of the carrier concentration in a semiconductor.
The purpose of this effort was to characterize statistically and experimentally the interfacial adhesion damage of generic dual in-line packages (DIP's) exposed to accelerated stress conditions.
